1/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.06 - rev.b 1.2v drive nch mosfet rue002n05 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) high speed switing. 2) small package(emt3). 3)ultra low voltage drive(1.2v drive). ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 3000 rue002n05 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 50 v gate-source voltage v gss ? 8v continuous i d ? 200 ma pulsed i dp ? 800 ma continuous i s 125 ma pulsed i sp 800 ma power dissipation p d 150 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to +150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 833 ? c / w * each terminal mounted on a recommended land. parameter type source current (body diode) drain current parameter *2 *1 *1 * *2 *1 *1 abbreviated symbol : rh emt3 (sc-75a) (1) source (2) gate (3) drain ? 1 body diode ? 2 esd protection diode (2) (1) ? 2 ? 1 (3)
2/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.06 - rev.b data sheet rue002n05 ? electrical characteristics (ta = 25 ? c) ? symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss 50 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =50v, v gs =0v gate threshold voltage v gs (th) 0.3 - 1.0 v v ds =10v, i d =1ma -1.62.2 i d =200ma, v gs =4.5 v -1.72.4 i d =200ma, v gs =2.5 v -1.92.7 i d =100ma, v gs =1.8 v -2.04.0 i d =40ma, v gs =1.5v -2.47.2 i d =20ma, v gs =1.2v forward transfer admittance l y fs l 0.4 - - s i d =200ma, v ds =10v input capacitance c iss -25-pfv ds =10v output capacitance c oss -6-pfv gs =0v reverse transfer capacitance c rss -3-pff=1mhz turn-on delay time t d(on) -4-nsi d =100ma, v dd 30 v rise time t r -6-nsv gs =4.5v turn-off delay time t d(off) -15-nsr l =300 ? fall time t f -55-nsr g =10 ? *pulsed conditions parameter static drain-source on-state resistance r ds (on) ? * * * * * * * * * * ? body diode characteristics (source-drain) (ta = 25 ? c) ? symbol min. typ. max. unit forward voltage v sd --1.2vi s =200ma, v gs =0v *pulsed conditions parameter *
3/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.06 - rev.b data sheet rue002n05 ? electrical characteristic curves 0.1 1 10 100 0.01 0.1 1 ta=125c ta=75c ta=25c ta= -25c 0 0.1 0.2 0.3 0.4 0 0.2 0.4 0.6 0.8 1 v gs = 0.8v ta=25c pulsed v gs = 1.0v v gs = 4.5v v gs = 2.5v v gs =1.8v v gs =1.5v v gs = 1.2v 0.001 0.01 0.1 1 00.511.52 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 0.1 1 10 100 0.01 0.1 1 ta= 25c pulsed v gs =1.2v v gs = 1.5v v gs = 1.8v v gs = 2.5v v gs = 4.5v 0.1 1 10 100 0.01 0.1 1 v gs = 2.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 100 0.01 0.1 1 v gs = 4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 100 0.01 0.1 1 ta=125c ta=75c ta=25c ta= -25c 0.1 1 10 100 0.01 0.1 1 ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ? ) fig.2 typical output characteristics( ? ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ? ) fig.5 static drain-source on-state resistance vs. drain current( ? ) fig.6 static drain-source on-state resistance vs. drain current( ? ) fig.7 static drain-source on-state resistance vs. drain current( ? ) fig.9 static drain-source on-state resistance vs. drain current( ? ) drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] gate-source voltage : v gs [v] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] static drain-source on-state resistance : rds(on)[ ?? ] drain-current : i d [a] fig.8 static drain-source on-state resistance vs. drain current( ? ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] drain current : i d [a] drain current : i d [a] v gs = 1.5v pulsed v gs = 1.8v pulsed v gs = 1.2v pulsed 0 0.1 0.2 0.3 0.4 0246810 v gs =0.8v ta=25c pulsed v gs =1.0v v gs =1.2v v gs = 4.5v v gs = 2.5v v gs =1.8v v gs =1.5v
4/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.06 - rev.b data sheet rue002n05 0.1 1 0.001 0.01 0.1 1 v ds = 10v pulsed ta= -25c ta=25c ta=75c ta=125c 0 1 2 3 4 5 6 7 8 9 10 0510 ta=25c pulsed i d =200ma i d = 20ma 0.01 0.1 1 00.511.5 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0.1 1 10 100 1000 0.01 0.1 1 10 100 c iss c oss c rss ta=25c f=1mhz v gs =0v 1 10 100 1000 0.01 0.1 1 t f t d(on) t d(off) ta=25c v dd =30v v gs =4.5v r g =10 ?? pulsed t r fig.11 reverse drain current vs. sourse-drain voltage fig.12 static drain-source on-state resistance vs. gate source voltage fig.14 typical capacitance vs. drain-source voltage fig.13 switching characteristics source current : i s [a] source-drain voltage : v sd [v] static drain-source on-state resistance : r ds (on)[ ?? ] gate-source voltage : v gs [v] switching time : t [ns] drain-current : i d [a] drain-source voltage : v ds [v] capacitance : c [pf] fig.10 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain-current : i d [a]
5/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.06 - rev.b data sheet rue002n05 ? measurement circuits ? ? notice ? this product might cause chip aging and breakdow n under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v d s d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off)
r1010 a www.rohm.com ? 2010 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redunda ncy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
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